vishay TFBS4710 document number 82612 rev. 1.3, 11-nov-03 vishay semiconductors www.vishay.com 1 not for new design 18071 serial infrared transceiver sir, 115.2 kbit/s, 2.7 v to 5.5 v operation description the TFBS4710 is a low profile, full range infrared data transceiver module. it supports irda data rates up to 115.2 kbit/s (sir). the transceiver module con- sists of a photo pin photodiode, an infrared emitter (ired), and a low-power cmos control ic to provide a total front-end solution in a single package. the device has a link distance of 1 meter. the rxd pulse width is independent of the duration of txd pulse and always stays at a fixed width thus making the device optimum for all standard sir encoder/ decoder and interfaces. the shut down (sd) feature cuts current consumption to typically 10 na. features ? compliant with the late st irda physical layer specification ( 9.6 kbit/s to 115.2 kbit/s) small package: h 2.74 mm x d 3.33 mm x l 8.96 mm typical link distance 1 m drop in replacement for irm5000d/ irmt5000 battery & power management features: > idle current - 75 a typical > shutdown current - 10 na typical > operates from 2.4 v - 5.0 v within specification over full temperature range from - 25 c to + 85 c remote control - transmit distance up to 8 meters tri-state receiver output, floating in shutdown with a weak pull-up fixed rxd output pulse width (2 s typical) meets irfm fast connection requirements split power supply, an independant, unregulated supply for ired anode and a well regulated supply for v cc directly interfaces with various super i/o and controller devices and encoder/ decoder such as toim4232. applications ideal for battery operated devices pdas mobile phones electronic wallet (irfm) notebook computers digital still and video cameras printers, fax machines, photocopiers, screen projectors data loggers external infrared adapters (dongles) diagnostics systems medical and industria l data collection devices parts table part description qty / reel TFBS4710-tr1 oriented in carrier tape for side view surface mounting 1000 pcs TFBS4710-tt1 oriented in carrier tape for top view surface mounting 1000 pcs
www.vishay.com 2 document number 82612 rev. 1.3, 11-nov-03 vishay TFBS4710 vishay semiconductors functional block diagram pinout TFBS4710 weight 100 mg definitions: in the vishay transceiver data s heets the following nomenclature is used for defining the irda operating modes: sir: 2.4 kbit/s to 115.2 kbit/s, equiva lent to the basic serial infrared standard with the physical layer version irphy 1.0 mir: 576 kbit/s to 1152 kbit/s fir: 4 mbit/s vfir: 16 mbit/s mir and fir were implemented with irphy 1.1, followed by irphy 1.2, adding the sir low power standard. irphy 1.3 extended the low power option to mir and fir and vfir was added with irphy 1.4.a new version of the standard in any case obsoletes the former version. with introducing the updated versi ons the old versions are obso- lete. therefore the only valid irda standard is the actual version irphy 1.4 (in oct. 2002). pin description driver comp amp driver txd sd gnd power control v cc ired a rxd 18280 1 23456 18511 pin number function description i/o active 1 ired anode ired anode is connected to a power s upply. the led current can be decreased by adding a resistor in series between the power supply and ired anode. a separate unregulated power supply can be used at this pin. 2 txd this input is used to turn on ired transmitter when sd is low. an on-chip protection circuit disables the led driver if the txd pin is asserted for longer than 80 s ihigh 3 rxd received data output, normally stays high but goes low for a fixed duration during received pulses. it is capable of driving a standard cmos or ttl load. olow 4 sd shutdown. setting this pin active for mo re than 1.5 ms switches the device into shutdown mode ihigh 5v cc regulated supply voltage 6 gnd ground
vishay TFBS4710 document number 82612 rev. 1.3, 11-nov-03 vishay semiconductors www.vishay.com 3 absolute maximum ratings reference point ground, pin 6 unless otherwise noted. electrical characteristics transceiver t amb = 25 c, v cc = v ireda = 2.4 v to 5.5 v unless otherwise noted. parameter test conditions symbol min ty p. max unit supply voltage range, all states v cc - 0.3 + 6.0 v input current for all pins except ired anode pin i cc 10.0 ma output sink current, rxd 25.0 ma average output current, pin 1 20 % duty cycle i ired (dc) 60 ma repetitive pulsed output current < 90 s, t on < 20 % i ired (rp) 300 ma ired anode voltage, pin 1 v ireda - 0.5 + 6.0 v voltage at all inputs and outputs v in > v cc is allowed v in - 0.5 + 6.0 v power dissipation see derating curve 200 mw junction temperature 125 c ambient temperature range (operating) t amb - 30 + 85 c storage temperature range t stg - 40 + 100 c soldering temperature see recommended solder profile 240 c parameter test conditions symbol min ty p. max unit supply voltage range, all states v cc 2.4 5.5 v idle supply current @ v cc1 (receive mode, no signal) sd = low, e e = 1 klx *) , t amb = - 25 c to + 85 c, v cc1 = v cc2 = 2.7 v to 5.5 v i cc1 90 130 a sd = low, e e = 1 klx *) , t amb = 25 c, v cc1 = v cc2 = 2.7 v to 5.5 v i cc1 75 a receive current v cc = 2.7 v i cc 280 a shutdown current sd = high, t = 25 c, e e = 0 klx i sd 2 a sd = high, t = 85 c i sd 3 a operating temperature range t a - 25 + 85 c output voltage low, rxd i ol = 1 ma v ol - 0.5 0.15 x v cc v output voltage high, rxd i oh = - 500 av oh 0.8 x v cc v cc + 0.5 v i oh = - 250 av oh 0.9 x v cc v cc + 0.5 v rxd to v cc impedance r rxd 400 500 600 k ? input voltage low: txd, sd v il - 0.5 0.5 v input voltage high: txd, sd cmos level (0.5 x v cc typ, threshold level) v ih v cc - 0.5 6.0 v input leakage current (txd, sd) v in = 0.9 x v cc i ich - 2 + 2 a
www.vishay.com 4 document number 82612 rev. 1.3, 11-nov-03 vishay TFBS4710 vishay semiconductors optoelectronic characteristics receiver t amb = 25 c, v cc = 2.4 v to 5.5 v unless otherwise noted transmitter t amb = 25 c, v cc = 2.4 v to 5.5 v unless otherwise noted. controlled pull down current sd, txd = "0" or "1", 0 < v in < 0.15 v cc i irtx + 150 a sd, txd = "0" or "1" v in > 0.7 v cc i irtx - 1 0 1 a input capacitance c i 5pf parameter test conditions symbol min ty p. max unit minimum detection threshold irradiance, sir mode 9.6 kbit/s to 115.2 kbit/s = 850 nm - 900 nm, 0 = , 15 e e 10 (1.0) 25 (2.5) 40 (4) mw/m 2 ( w/cm 2 ) maximum detection threshold irradiance = 850 nm - 900 nm e e 5 (500) kw/m 2 (mw/cm 2 ) maximum no detection threshold irradiance e e 4 (0.4) mw/m 2 ( w/cm 2 ) rise time of output signal 10 % to 90 %, c l = 15 pf t r(rxd) 10 100 ns fall time of output signal 90 % to 10 %, c l = 15 pf t f(rxd) 10 100 ns rxd pulse width input pulse width > 1.2 st pw 1.65 2.0 3.0 s leading edge jitter input irradiance = 100 mw/m 2 , 115.2 kbit/s 250 ns standby /shutdown delay after shutdown active 150 s receiver startup time power-on delay latency t l 150 s parameter test conditions symbol min ty p. max unit ired operating current i d 250 300 350 ma ired forward voltage i r = 300 ma v f 1.4 1.8 1.9 v ired leakage current txd = 0 v, 0 < v cc < 5.5 v i ired - 1 1 a output radiant intensity = 0 , 15 , txd = high, sd = low i e 40 70 350 mw/sr v cc = 5.0 v, = 0 , 15 , txd = high or sd = high (receiver is inactive as long as sd = high) i e 0.04 mw/sr output radiant intensity, angle of half intensity 24 peak-emission wavelength p 880 900 nm spectral bandwidth ? 45 nm optical rise time t ropt 10 100 ns optical fall time t fopt 10 100 ns optical output pulse duration input pulse width 1.63 s, 115.2 kbit/s t opt 1.46 1.63 1.8 s input pulse width t txd < 20 st opt t txd t + 0.15 s input pulse width t txd 20 st opt 50 s optical overshoot 25 % parameter test conditions symbol min ty p. max unit
vishay TFBS4710 document number 82612 rev. 1.3, 11-nov-03 vishay semiconductors www.vishay.com 5 recommended solder profile recommended circuit diagram the TFBS4710 integrates a sensitive receiver and a built-in power driver. this combination needs a care- ful circuit layout. the use of thin, long, resistive and inductive wiring should be avoided. the inputs (txd, sd) and the output (rxd) should be directly (dc) cou- pled to the i/o circuit. the combination of resistor r1 and capacitors c1, c2, c3 and c4 filter out any power supply noise to provide a smooth supply voltage. the placement of these components is critical. it is strongly recommended to position c3 and c4 as close as possible to the transceiver power supply pins. a tantalum capacitor should be used for c1 and c3 while a ceramic capacitor should be used for c2 and c4. a current limiting resistor is not needed for normal operation. it is strongly recommended to use the rled values mentioned in table 1 below for high temperature operation. for low power mode, ired anode voltage of less than 5 v is recommended. under extreme emi conditions as placing a rf - transmitter antenna on top of the transceiver, it is rec- ommended to protect all inputs by a low-pass filter, as a minimum a 12 pf capacitor, especially at the rxd port. basic rf design rules for ci rcuit design should be fol- lowed. especially longer signal lines should not be used without proper termination. for reference see "the art of electronics" by paul horowitz, winfield hill, 1989, cambridge university press, isbn: 0521370957. 0 20 40 60 80 100 120 140 160 180 200 220 240 260 0 50 100 150 200 250 300 350 time/s temperature /c 2...4c/s 2-4c/s 10 s max. @ 230c 120 s...180 s 160c max. 240c max. 90 s max. 18075 figure 1. recommended application circuit vcc rled r1= 47 ? c1 4.7 f c2 0.1 f c3 4.7 f c4 0.1 f ir controller irrx irtx irmode vdd gnd vcc (5) sd (4) gnd (6) rxd (3) ireda (1) txd (2) TFBS4710 18281
www.vishay.com 6 document number 82612 rev. 1.3, 11-nov-03 vishay TFBS4710 vishay semiconductors table 1. high operating tem perature > 70 c i/o and software in the description, already different i/os are men- tioned. different combinations are tested and the function verified with the special drivers available from the i/o suppliers. in special cases refer to the i/ o manual, the vishay application notes, or contact directly vishay sales, marketing or application. table 2. recommended application circuit com- ponents table 3. truth table rled ( ? ) rled ( ? )) v led (v) standard power mode (intensity > 40 mw/sr, 0 - 15 ) low power mode (intensity > 3.6 mw/sr, 0 - 15 ) 2.7 3 50 3.3 16 > 50 5.0 18 > 60 compo nent recommended value vishay part number c1, c3 4.7 f, 16 v 293d 475x9 016b c2, c4 0.1 f, ceramic vj 1206 y 104 j xxmt r1 47 ? , 0.125 w crcw-1206-47r0-f-rt1 rled see table 1 inputs outputs remark sd txd optical input irradiance mw/m 2 rxd transmitt er operation high > 1 ms x x weakly pulled (500 ? ) to v cc1 0 shutdown low high x high inactive i e transmitting low high > s x high inactive 0 protection is active low low < 4 high inactive 0 ignoring low signals below the irda defined threshold for noise immunity low low > min. detection threshold irradiance < max. detection threshold irradiance low (active) 0 response to an irda compliant optical input signal low low > max. detection threshold irradi ance undefined 0 overload conditions can cause unexpected outputs
vishay TFBS4710 document number 82612 rev. 1.3, 11-nov-03 vishay semiconductors www.vishay.com 7 package dimensions in mm 18086
www.vishay.com 8 document number 82612 rev. 1.3, 11-nov-03 vishay TFBS4710 vishay semiconductors reel dimensions 14017 w 1 w 2 reel hub tape width a max. n w 1 min. w 2 max. w 3 min. w 3 max. mm mm mm mm mm mm mm 16 330 50 16.4 22.4 15.9 19.4
vishay TFBS4710 document number 82612 rev. 1.3, 11-nov-03 vishay semiconductors www.vishay.com 9 tape dimensions in mm 18297
www.vishay.com 10 document number 82612 rev. 1.3, 11-nov-03 vishay TFBS4710 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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